High Power DC Charging Solutions
As the voltage of electric vehicle batteries has increased from 400 V to 800 V, the voltage ratings of power component have increased to more than 1200 V in order to reduce the mass of copper wire while increasing power density. Infineon's CoolSiC MOSFET 2kV 62 mm SiC MOS half-bridge module evaluation board does just that with the EVAL-FFXMR20KM1HDR, a gate driver board for driving a 62 mm module in a half-bridge configuration using Infineon's latest CoolSiC MOSFET technology. It uses the 1ED3890MC12M compact gate driver and components such as the boost stage for reliability and fast controllability to increase the output power of the driver.
This half-bridge module evaluation board features a half-bridge driver for 62 mm, 2 kV modules with CoolSiC Trench MOSFET technology, which supports separation of source and sink to optimize the gate drive. Featuring 1ED3890MC12M or 1ED3890MU12M (X3 digital) driver ICs with I2C bus for parameter tuning, support for hardware undervoltage lockout (UVLO) protection, proper PCB design to limit PCB heating during operation, two-stage turn-off (TLTO) with adjustable slope, stabilization time, and stabilization level, and negative voltage regulation from 5 V to 0 V for a plug-and-play, ready-to-use device test board solution. It can be used in electric vehicle charging, photovoltaic, and uninterruptible power supply (UPS) applications.
The EiceDRIVER 1ED38x0Mc12M enhancement utilized in this evaluation board is a single-channel 5.7 kV (rms) isolated gate driver IC with I2C configurability for DESAT, soft shutdown, UVLO, Miller clamp, and optional two-stage shutdown. This gate driver supports 650 V, 1200 V, 1700 V, 2300 V IGBTs, SiC and Si MOSFETs.
This gate driver supports 40 V absolute maximum output supply voltage and ±3 A, ±6 A, and ±9 A typical peak output currents for sinking and pulling currents, independent source and sinking outputs for hard switching or optional two-stage shutdown and active Miller clamp, an I2C bus for parameter configuration and status register readout, and support for accurate, adjustable, temperature-compensated VCEsat detection (DESAT) with fault output, adjustable IGBT soft shutdown with desaturation detection, operation at high ambient temperatures up to 125 °C, and over-temperature shutdown at 160 °C (±10 °C).
This gate driver supports tight IC-to-IC propagation delay matching (tPDD, max = 30 ns), hysteresis undervoltage lockout protection on the input and output sides, and active shutdown. The integrated ADC comparator generates configurable feedback or fault shutdown behavior, high common-mode transient immunity (CMTI) of 200 kV/μs, and is available in a small, space-saving, fine-pitch DSO-16 package with large creepage distances (greater than 8 mm), and is UL 1577, VDE 0884-11 safety certified for industrial applications.
